SSD NVMe m.2 Sabrent Rocket Q4 на 4TB (лишилась одна штука)

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Rocket Q4 NVMe SSD
4TB M.2 2280 PCIe 4.0 NVMe QLC SSD
SB-RKTQ4-4TB
PCIe 4.0 x4 interface, NVMe 1.3 compliant. APST/ASPM/L1.2 support.
Supports SMART and TRIM functions. Works in an enclosure.
Wide flash compatibility. Uses QLC with DRAM.
Advanced endurance features for a long drive lifespan.
Upgradeable firmware and software support.
4.0-capable motherboard and M.2 heatsink are recommended, but the drive is backward compatible with PCIe 3.0 and 2.0 M.2 sockets.

Performance
Interface - PCIe 4.0 x4, NVMe 2.0
Sequential Read (128KB) - Up to 7.0 GB/s
Sequential Write (128KB) - Up to 6.8 GB/s
Random Read (4K) - Up to 1.6M IOPS
Random Write (4K) - Up to 180K IOPS
Sustained Latency (4K R/W) - As low as 90µs / 15µs

Endurance & Reliability
Endurance (DWPD) - 1 DWPD
TBW (30.72TB Model) - Up to 56,064 TBW
MTBF - 2.5 Million Hours
UBER - 1 sector per 10^18 bits read

Додаткова інформація звідси: techpowerup.com/ssd-specs/sabrent-rocket-q4-4-tb.d558

DRAM Cache
Type: DDR4-2666 CL19
Name: SK Hynix H5AN8G8NCJR-VKC
Capacity: 2048 MB (2x 1024 MB)
Organization: 8Gx8

Features
TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption: No
RGB Lighting: No
PS5 Compatible: Yes

Physical
Form Factor: M.2 2280 (Double-Sided)
Interface: PCIe 4.0 x4
Protocol: NVMe 1.3
Power Draw: 1.1 W (Idle) 4.2 W (Avg) 7.0 W (Max)

AND Flash
Manufacturer: Micron
Name: N28A FortisFlash
Part Number: IA8IG66AWA
Type: QLC
Technology: 96-layer
Speed: 50 MT/s .. 800 MT/s
Capacity: 4 chips 8 Tbit
ONFI: 4.0
Topology: Floating Gate
Die Size: 115 mm² (8.9 Gbit/mm²)
Dies per Chip: 8 dies 1 Tbit
Planes per Die: 4
Read Time (tR): 90 µs
Program Time (tProg): 2080 µs
Block Erase Time (tBERS): 15 ms
Die Read Speed: 711 MB/s
Die Write Speed: 30 MB/s
Endurance: 1500 P/E Cycles (up to 30000 in SLC Mode)
Page Size: 16 KB
Block Size: 4608 Pages
Plane Size: 492 Blocks

Controller
Manufacturer: Phison
Name:
PS5016-E16-32
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Architecture: ARM 32-bit Cortex-R5
Core Count: Quad-Core
Frequency: 733 MHz
Foundry: TSMC
Process: 28 nm
Flash Channels: 8 х 800 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

Performance
Sequential Read: 4,900 MB/s
Sequential Write: 3,500 MB/s
Random Read: 350,000 IOPS
Random Write: 700,000 IOPS
Endurance: 800 TBW
Warranty: 5 Years
MTBF: 1.8 Million Hours
Drive Writes Per Day (DWPD): 0.1
SLC Write Cache: approx. 1000 GB (dynamic only)
Speed when Cache Exhausted: approx. 800 MB/s
Cache Folding Speed: 200 MB/s